Not gate

attribute
Calorific Value
0.0
Heat Capacity
450.0
Mass
2.90000009536743
Max Pressure Resistance
1120
Melting Point
1357
Oxygen Storage
300
Particle Penetration Rate
0.9
State
Solid
Synthesis Method
Semiconductorx3<br>Siliconx1<br>
Thermal Conductivity
7.32000017166138
Synthesis
Semiconductorx3
Siliconx1
Siliconx1
The no-gate can convert the high voltage signal (greater than 500V) into a low voltage signal (300V), and the low voltage signal (less than 500V) into a high voltage signal (1000V)
Structure
Material







































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